Mitsubishi Electric Ships Two New SBD-embedded SiC-MOSFET Modules

2024-06-11
TOKYO, June 10, 2024 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has begun shipping low-current 3.3kV/400A and 3.3kV/200A versions of a Schottky barrier diode (SBD) embedded silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) module for large industrial equipment, including rolling stock and electric power systems, from today, June 10. Together with the existing 3.3kV/800A version, the newly named UnifullTM series comprises three modules to meet the growing demand for inverters capable of increasing power output and power conversion efficiency in large industrial equipment.
To view the complete content, please log in.
JARN
JARN
JARN
JARN
JARN
JARN
JARN
JARN
JARN
JARN
JARN
JARN
JARN
JARN
JARN
JARN
JARN
JARN
JARN
 
 
Midez MBT